Babysitter ald-process-controller
Atomic Layer Deposition skill for conformal thin film deposition with atomic-level thickness control
install
source · Clone the upstream repo
git clone https://github.com/a5c-ai/babysitter
Claude Code · Install into ~/.claude/skills/
T=$(mktemp -d) && git clone --depth=1 https://github.com/a5c-ai/babysitter "$T" && mkdir -p ~/.claude/skills && cp -r "$T/library/specializations/domains/science/nanotechnology/skills/ald-process-controller" ~/.claude/skills/a5c-ai-babysitter-ald-process-controller && rm -rf "$T"
manifest:
library/specializations/domains/science/nanotechnology/skills/ald-process-controller/SKILL.mdsource content
ALD Process Controller
Purpose
The ALD Process Controller skill provides comprehensive atomic layer deposition process control, enabling conformal thin film growth with atomic-level precision through optimized pulse sequences and in-situ monitoring.
Capabilities
- Precursor pulse/purge optimization
- Growth per cycle (GPC) characterization
- Film uniformity mapping
- Conformality assessment
- In-situ monitoring integration
- Multi-component film design
Usage Guidelines
ALD Process Control
-
Saturation Studies
- Vary pulse times
- Identify saturation dose
- Optimize purge times
-
Process Window
- Determine ALD window
- Optimize temperature
- Monitor GPC stability
-
Film Quality
- Characterize uniformity
- Measure conformality
- Assess impurity levels
Process Integration
- Thin Film Deposition Process Optimization
- Nanodevice Integration Process Flow
Input Schema
{ "material": "string", "precursor_a": "string", "precursor_b": "string", "target_thickness": "number (nm)", "substrate": "string", "temperature": "number (C)" }
Output Schema
{ "optimized_recipe": { "precursor_a_pulse": "number (s)", "purge_a": "number (s)", "precursor_b_pulse": "number (s)", "purge_b": "number (s)" }, "gpc": "number (Angstrom/cycle)", "cycles_required": "number", "uniformity": "number (%)", "conformality": "number (% step coverage)" }